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      SEMI China HB-LED Standards TC Spring Meeting 2015 Sponsored by Nanjing J-Crystal Photoelectric Held in Nanjing

      Published: 2015-04-22

          

      The SEMI China HB-LED Standards TC Spring Meeting 2015 was held at the Sofitel Galaxy Hotel Nanjing on April 10. The Meeting was organized by SEMI China and sponsored by high brightness sapphire substrates manufacturer Nanjing J-Crystal Photoelectric Technology Co., Ltd. More than 100 core members, experts, and representatives from 50 enterprises attended the meeting.

      The International Semiconductor Equipment and Materials Industry Association (SEMI) is a worldwide professional industry association in the high-tech field and is committed to promoting overall development of supply chains in the fields of microelectronics, flat panel displays and solar opto-electronics. The SEMI China HB-LED Standards Technical Committee was established on March 30, 2014 and aims to formulate relevant industry norms and guidelines through multilateral consultation.

      The meeting sponsor, Nanjing J-Crystal Photoelectric Technology, is a subsidiary company under NGC LED Products Group and is a core member unit of the SEMI China HB-LED Standards Technical Committee. The Company vertically integrates the production of sapphire crystal ingots, bars and chips as well as PSS patterned substrates. It also boasts core technical abilities and overall solutions to sapphires from long crystals to cutting, grinding and polishing processes. Its main business incorporates important substrate materials for LEDs such as 2-inch, 4-inch and 6-inch sapphire substrates as well as PSS patterned substrates. The company was ranked among the top three enterprises out of 67 substrate product enterprise candidates for the selection of the “2012 High Power Golden Globe Award – Annual Excellent LED Products”.

      At the Meeting, the work progress in the three standards of “Specifications for HB-LED Sapphire Materials”, “Specifications for Sapphire Crystal Bars for HB-LED Substrates”, and “Detection Method for Epitaxial Wafer Surface Defects” was touched upon and the contents thereof were discussed, with a proposal for the new standard (SNARF) Monocrystal Orientation Detection Method being considered and discussed. In addition, the special topic report on “Studies on Chemical Cleaning and Plasma Etching of Sapphire Monocrystals in LED Applications” was also heard.


      Zheng Songsen (front center), Executive Vice General Manager of Nanjing J-Crystal Photoelectric Technology, gives a general introduction of the Company to experts and representatives present at the Meeting.


      Zheng Songsen accompanies experts and representatives present at the Meeting on their visit to the Company.

      Experts and representatives present at the Meeting observe with interest LED products at the Company

      After the Meeting, some attendees, accompanied by Mr. Zheng Songsen, Executive Vice General Manager of Nanjing J-Crystal Photoelectric Technology, watched the crystal bar slicing, grinding and cleaning and PSS processing and manufacturing equipment. Experts and representatives present at the Meeting showed great interest in the methodical and orderly production site, advanced equipment and high quality LED products of Nanjing J-Crystal Photoelectric Technology. (By Qian Hongru)

      Group photo taken in the factory of Nanjing J-Crystal Photoelectric Technology of the experts and representatives present at the Meeting

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